발표 논문 목록
Publications List
 
전남대학교 공과대학 금속공학과 이병택
Byung-Teak LEE, Chonnam National University, Kwangju, 500-757, Korea
 

* 해외학술지 게재, International Journals

 1. B.-T. Lee, J. Lee and S. Hwang, The Effects of Alloying Elements on Hydrogen Solubility of  Ferritic Iron at Atmospheric Hydrogen Pressure and Elevated Temperatures, Archiv für das  Eisenhüttenwesen 53, 71 (1982)

 

2. G. Hong, J. Lee and B.-T. Lee, Study on the Estimation of Hydrogen Diffusivity in Liquid Fe-base Ternary System Containing Substitutional Alloying Elements, Archiv für das Eisenhüttenwesen 53, 258 (1982)

 

3. B.-T. Lee, T.D. Sands, R. Gronsky and E.D. Bourret, TEM Study of Precipitates in In-doped GaAs, Inst. Physics Conf. Ser. 83, 51 (1986)

 

4. J. Ding, B.-T. Lee, R. Gronsky, J. Washburn, D. Chin and T. Van Duzer, High Temperature Stability of Nb/GaAs and NbN/GaAs Interfaces, Appl. Phys. Lett. 52, 135 (1988)

 

5. B.-T. Lee, R. Gronsky and E.D. Bourret, Dislocation Loops and Precipitates Associated with Excess Arsenic in GaAs, J. Appl. Phys. 64, 114 (1988)

 

6. B.-T. Lee, R. Gronsky and E.D. Bourret, Transmission Electron Microscopy of As Precipitates in GaAs: Their Morphology and Their Orientation Relationship with the Matrix, J. Crystal Growth 96, 333 (1989)

 

7. J.L. Hurd, D.L. Ferry, B.-T. Lee, K.M. Yu, E.D. Bourret and E.E. Haller, Polycrystalline Hexagonal BN Films on SiO2 for III-V Semiconductor Application, J. Materials Research 4, 350 (1989)

 

8. B.-T. Lee, E.D. Bourret, R. Gronsky and I.S. Park, Annealing of GaAs Single Crystals: Relationship between Electrical Properties and Structural Defects, J. Appl. Phys. 65, 1030 (1989)

 

9. K.I. Cho, W.K. Choo, S.C. Park, T. Nishinaga and B.-T. Lee, Solid Phase Epitaxial Growth of GaAs on Si Substrates, Appl. Phys. Lett. 56, 448 (1990)

 

10. B-T. Lee, J.Y. Lee and E.D. Bourret, Atomic Structure of Twins in GaAs, Appl. Phys. Lett. 57, 346 (1990)

 

11. P.A. Morton, R.A. Logan, T. Tanbun-Ek, P.F. Sciortino, Jr., A.M. Sergent, R.K. Montgomery, and B.-T. Lee, 25GHz Bandwidth 1.55 m GaInAsP P-doped Multi-Quantum-well Lasers, Elect. Lett. 28, 2156 (1992).

 

12. D.-K. Kim, B.-T. Lee, Y.D. Woo, T.W. Kang, and M.C. Paek, Effects of In-situ Thermal Annealing on Defects Associated with GaAs/Ge interface in GaAs/Ge/Si Heterostructure, Materials Letters 16, 26(1993)

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13. B.-T. Lee, R. A. Logan, R. F. Kalicek Jr., A. M. Sergent, D. L. Coblentz, K. W. Wecht, and T. Tanbun-Ek, Fabrication of InGaAsP/InP Buried Heterostructure Laser Using Reactive Ion Etching and Metalorganic Chemical Vapor Deposition, Photonics Tech. Lett. 5, 279 (1993)

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14. B.-T. Lee, R. A. Logan, and S. N. G. Chu, Observation of Growth Patterns during Atmospheric Pressure Metalorganic Vapor Phase Epitaxy Regrowth of InP around Etched Mesas, J. Crystal Growth 130, 287 (1993).

 

15. B.-T. Lee, R. A. Logan and R. F. Kalicek, Jr., Planar Regrowth of InP and InGaAs around Reactive Ion Etched Mesas using Atmospheric Pressure Metalorganic Vapor Phase Epitaxy, Appl. Phys. Lett. 63, 234 (1993).

 

16. B.-T. Lee, T. R. Hayes, P. M. Thomas, R. Pawelek and P. F. Sciortino, Jr., SiO2 Mask Erosion and Sidewall Composition During CH4/H2 Reactive Ion Etching of InGaAsP/InP, Appl. Phys. Lett. 63, 3170 (1993).

 

17. B.-T. Lee and R. A. Logan, Growth of InP on Etched Grooves Using Atmospheric Pressure Metalorganic Vapor Phase Epitaxy, J. Crystal Growth 140, 1 (1994).

 

18. D.-K. Kim and B.-T. Lee, Heteroepitaxial Growth of GaAs on (100) GaAs and InP by Selective Liquid Phase Epitaxy, Jpn. J. Appl. Phys.33, 5870 (1994).

 

19. D.-K. Kim and B.-T. Lee, Prevention of Substrate Melt-back by Se Addition During Liquid Phase Epitaxial Growth of GaAs on GaAs-coated Si, Materials Letters 20, 335 (1994).

 

20. D.-K. Kim, J.-H. Ahn, B.-T. Lee, H.J. Lee, S.S. Cha, K.Y. Lim, J.B. Kim, J.-L. Lee, S.J. Jang, and I.-S. Park, Liquid Phase Epitaxial Growth of High Quality GaAs on InP Using Se-doped GaAs Buffer Layer and Grating-patterned Substrates, Appl. Phys. Lett. 66, 2531 (1995).

 

21. S.S. Cha, Y.K. Shin, H.I. Jeon, Z.S. Piao, K.Y. Lim, E.K. Suh, Y.H. Lee, D.K. Kim, B.T. Lee, and H.J. Lee, Composition and Structure Analyses on Spontaneously Formed AlGaAs Superlattice-like Structure on (100) GaAs, Compound Semiconductors 1994, Inst. Phys. Conf. Series 141, 213-216 (1995).

 

22. Byung-Teak Lee, Dong-Keun Kim, and Ju-Heon Ahn, Observation of Oxide Films on CH4/H2 Reactive Ion Etching Processed InP Mesa Sidewalls and Surfaces, Semiconductor Science and Technology 11, 1456 (1996).

 

23. H.S. Kim, Y.G. Shin, Y.T. Hwang, J.Y. Kim, H.J. Lee, B.T. Lee, Y.S. Hwang, and S.D. Jung, Dislocation-relatd Etch Pits and Deep Level in Strain Relaxed SiGe Layers, Compound Semiconductors 1995, Inst. Phys. Conf. Series 145, 491-496 (1996).

 

24. Jong-Lam Lee, J. K. Mun, and B. T. Lee, Thermal degradation mechanism of Ti/Pt/Au Schottky contact to n-type GaAs, J. Appl. Phys., 82(10), p.5011-5016 (1997).

 

25. Y.H. Seo, K.C. Kim, H.W. Shim, K.S. Nahm, E.-K. Suh, H.J. Lee, D.-K. Kim, and B.-T. Lee, Effects of Experimental Parameters on Void Formation in the Growth of 3C-SiC Thin Film on Si Substrate, J. Electrochemical Soc. 145, 292 (1998).

 

26. Jae Kyoung Mun, Jong-Lam Lee, Haecheon Kim, Byung-Teak Lee, Jae Jin Lee, and Kwang-Eui Pyun, Degradation Mechanism of GaAs MESFETs, Microelectronics and Reliability, 38, 171 (1998).

 

27. Yi-Tae Kim, Jong-Lam Lee, and Byung-Teak Lee, Microstructural and Electrical Investigation of Pd/Ge/Ti/Au Ohmic Contacts to Pseudomorphic High Electron Mobility Transistor with Undoped Cap Layer, J. App. Phys. 84, 911 (1998).

 

28. Joo-Heon Ahn, Kwang Ryong Oh, Chan-Yong Park, Seon-Gyu Han, Hae Geun Kim, Byung-Teak Lee, Dong-Keun Kim, and Chongdae Park, Fabrication of a High Performance InGaAsP/InP Integrated Laser with Butt-coupled Passive Waveguides Utilizing CH4/H2 Reactive Ion Etching, Semiconductor Sci. Tech. 13, 1205 (1998).

 

29. B.-T. Lee, D.-K. Kim, Y.H. Seo, K.S. Nahm, H.J. Lee, K.-W. Lee, K.-S. Yu, Y. Kim, and S.J. Jang, Microstructural Investigation of Low Temperature Chemical Vapor Deposited 3C-SiC/Si Thin Films Using Single-source Precursors, J. Mat. Res. 14, 24 (1999).

 

30. B.-T. Lee, J.-S. Park, D.-K. Kim, and J.-H. Ahn, Characterization of Heavy Deposits on InP Mesa Sidewalls CH4/H2 Reactive Ion Etched Using SiO2 and Metal Masks, Semiconductor Science and Technology 14, 345 (1999).

 

31. J.H. Choi, J.H. Kim, B.-T. Lee, Y.M. Kim, and J.H. Moon, Microwave Dielectric Properties of Ba-Nd-Ti-O System Doped with Metal Oxides, Materials Letter 44, 29 (2000).

 

32. Byung-Teak Lee, Yang-Soo Shin, and Jin Hyeok Kim, High Temperature Interfacial Reaction of Al Thin Film with Single-Crystal 6H-SiC, Journal of Materials Research 15, 2284-2287 (2000).

 

33. Jong Kyu Kim, J. H. Je, Y. J. Park, B.-T. Lee, and Jong-Lam Lee, Microstructural investigation of Ni/Au ohmic contact on p-type GaN, Journal of The Electrochemical Society 147, 4645~4651 (2000).

 

34. N. I. Cho, Y. M. Kim, C. Hong, H. B. Chae, C. K. Kim, and B.-T. Lee, A Study of the Effect of UV Laser Annealing on a-SiC Films for Structure Ordering, J. Korean Phys. Soc. 37, 998~1002 (2000).

 

35. C. K. Moon, H. J. Song, J. K. Kim, J. H. Park, S. J. Jang, J.-B. Yoo, H.-R. Park, and Byung-Teak Lee, Chemical Vapor Deposition Growth and Characterization of Epitaxial 3C-SiC Films on SOI Substrates with Thin Silicon Top Layers, Journal of Materials Research 16, 24~27 (2001).

 

36. J. K. Kim, J. H. Je, Y. J. Park, J. W. Lee, T. I. Kim, I. O. Jung, B.-T. Lee, and Jong-Lam Lee, Microstructural and electrical investigation of Ni/Au Ohmic contact on p-type GaN, J. Electronic Materials 30, L8~L12 (2001).

 

37. Jong-Lam Lee, Y. T. Kim, J. W. Oh, B.-T. Lee, AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor using Pd/Ge Ohmic Contact, Jpn. J. Applied Physics 40, Part 1 No 3A, 1188-1193 (2001).

 

38. Byung-Teak Lee, S.-Y. Jung, J.-L. Lee, Y.-J. Park, M. C. Paek, and K.-I. Cho, Reactive ion etching of vertical GaN mesa by the addition of CH4 to BCl3/H2/Ar inductively coupled plasma, Semiconductor Science and Technology 16, 471 (2001).

 

39. H.-R. Park, S.-H. Lee, and B.-T. Lee, Characterization of the hole capacitance of hydrogenated amorphous silicon metal-insulator-semiconductor structures, J. Appl. Phys. 90, 6226-6229 (2001).

40. H.-R. Park, S.-H. Lee, and B.-T. Lee, Characterization of a-SiNx:H/a-Si:H MIS Structure Using Capacitance Techniques, J. Kor. Phys. Soc. 39, S141-146 (2001).

 

41. B. Kim, S. M. Kong, and B.-T. Lee, Modeling SiC etching in C2F6/O2 inductively coupled plasma using neural networks, J. Vac. Sci. and Tech. 20A, 146-152 (2002).

 

42. S.-M. Kong, H.-J. Choi, Byung-Teak Lee, S.Y. Han, and J.L. Lee, Reactive Ion Etching of SiC Using C2F6/O2 Inductively Coupled Plasma, J. Electronic Materials 31, 209-213 (2002).

 43. B. Kim, H. J. Choi, and B.-T. Lee, Surface roughness of silicon carbide etched in a C2F6  inductively coupled plasma, J. Vacuum Science and Technology 20A, 424-429 (2002).

 44. K.H. Chung, N.I. Cho, J.H. Lee, S.J. Yang, C.K. Kim, B.-T. Lee, K.H. Rim, N.K. Kim, and E.D. Kim,  Titanium-based Ohmic Contact on p-type 4H-SiC, Materials Science Forum 389-393, 913-916  (2002).

 45. Sang-Hun Jeong, Bong-Soo Kim, Byung-Teak Lee, Hyuk Ryul Park and Jae-Keun Kim, Structural  and Optical Properties of TiO2 Films Prepared Using a Reactive RF Magnetron Sputtering,  Journal of Korea Physics Society 41, 67-71 (2002).

 46. Sang Youn Han, Jong-Yoon Shin, Byung-Teak Lee and Jong-Lam Lee, “Microstructural  interpretation of Ni ohmic contact on n-type 4H-SiC”, J. Vac. Sci. Technol. B 20(4), 1496-1500  (2002).

 47. Sangsub Kim, Jong Ha Moon, Byung-Teak Lee, and S. Hishita, Recrystalization of ion beam  amophized Bi2Sr2TaCu2Ox thin film SrTiO3 (001), Thin Solid Films 415(1-2), 224-227 (2002).

 48. Seon-Hoon Kim, Kyung-T Lee, Sangsuk Lee, Jong Ha Moon and Byung-Teak Lee, Effects of Pt/Pd  Co-doping on the Sensitivity of SnO2 Thin Film Sensor, Jpn. J. App. Phys. 41(9A/B), L1002-L1005  (2002).

 49. Dae-Soo Jeong, Jong-Ha Moon, Byung-Teak Lee, and Jin-Hyeok Kim, Preparation of Epitaxial Pb  (Mg1/3Ta2/3)O3 Thin Film Using Chemical Solution Deposition, J. Materials Research 17(11),  2884-2887 (2002).

 50. Byungwhan Kim and Byung-Teak Lee, Relationships Between Etch Rate and Roughness of  Plasma Etched Surface, IEEE Trans. Plasma Science 30(5), 2074-2077 (2002).

 51. Hyun-Joon Choi and Byung-Teak Lee, Inductively Coupled Plasma Reactive Ion Etching of SiC  Single Crystals using NF3-based Gas Mixtures, J. Electr. Mat. 32, 1-4 (2003).

 52. J. H. Kim, H.-S. Shin, J.-H. Moon, and B.-T. Lee, Formation of YCrO3 thin films using radio-  frequency magnetron sputtering method for a wide range thermistor application, Jpn. J. Appl.  Phys. 42, 575-578 (2003).

 53. Sang-Hun Jeong, Jae-Keun Kim, and Byung-Teak Lee, Effects of N2+ Ion Irradiation during AlN  Film Growth by Dual Ion-beam Deposition, J. Kor. Phys. Soc. 42, S961-S965 (2003).

 54. Sang-Hun Jeong, Junji Nishii, Hyuk-Ryul Park, Jong-Ha Moon, and Byung-Teak Lee, Influence of  fluorine doping on SiOxFy films prepared from a TEOS/O2/CF4 mixture using a plasma  enhanced chemical vapor deposition system, Surface Coatings and Technology 168, 51-56 (2003).

 55. Sang-Hun Jeong, Bong-Soo Kim, and Byung-Teak Lee, Photoluminescence dependence of ZnO  films grown on Si(100) by radio-frequency magnetron sputtering on the growth ambient, Appl.  Phys. Lett. 82, 2625-2627 (2003)

 56. B.-T. Lee, J.-Y. Shin, S.-H. Kim, J.-H. Kim, S.-Y. Han, and J. L. Lee, Investigation of Ti/Al and  TiN/Al Thin Films as the Stable Ohmic Contact for p-type 4H-SiC, J. Electronic. Mat. 32, 501-504  (2003).

 57. S.-H. Jeong, J.-K. Kim, and B.-T. Lee, Effects of growth conditions on the emission properties  of ZnO films prepared on Si (100) by RF magnetron sputtering, J. Physics D. 36, 2017-2020(2003).

 58. J.-H. Park, S.-J. Jang, C.-K. Moon, H.-J. Song, J. H. Kim, Y. Kim, and B.-T. Lee, Effects of  silicon-on-insulator substrates on the residual stress within hetero-epitaxial 3C-SiC thin films on  Si, Appl. Phys. Lett. 83, 1989-1991(2003).

 59. Byungwhan Kim and Byung-Teak Lee, Effect of plasma and control parameters on SiC etching  in a C2F6 plasma, Plasma Chemistry and Plasma Processing 23, 489-499 (2003).

 60. Dae-Soo Jeong, Yeon-Ah Shim, Jong-Ha Moon, Byung-Teak Lee, and Jin Hyeok Kim,  Heteroepitaxial growth of Pb(Mg1/3Ta2/3)O3 thin films on SrTiO3 substrates using chemical  solution deposition method : Microstructural evolution, Microelectronic Engineering 66, 561-567  (2003).

 61. B. Kim, S.-C. Ahn and B.-T. Lee, Proximity-controlled silicon carbide etching in inductively  coupled plasma, Thin Solid Films 434, 276-282 (2003).

 62. Byungwhan Kim, Kunho Kim, and B.-T. Lee, Radio frequency bias power effect on surface  roughness of silicon carbide plasma etching, Applied Surface Science 217, 261-267 (2003).

 63. Jin Jeong, Seong-Pyung Choi, Cha Ik Chang, Dong Chan Shin, Jin Sung Park, B.-T. Lee, Yeong-  Jun Park, Ho-Jun Song, Photoluminescence properties of SnO2 thin films grown by thermal CVD,  Solid State Communications 127, 595-597 (2003).

 64. Do-Heyoung Kim, Yong Jae Kim, Yo Soon Song, Byung-Teak Lee, Jin Hyeok Kim, Seigi Suh, and  Roy Gordon, Characteristics of Tungsten Carbide films prepared by plasma assisted atomic layer  deposition using bis(tert-butylimido) bis(dimethylamido)tungsten, J. Electrochem. Soc. 150, C740-  C744 (2003).

 65. Yeon-A Shim, Chang-June Yoo, Jong-Ha Moon, Byung-Teak Lee, Sang Sub Kim and Jin Hyeok  Kim, Highly Oriented Growth of a Pb(Mg1/3Nb2/3)O3 Thin Film on a Si (001) Substrate Using a  TiN Buffer Layer, Jpn. J. Appl. Phys. 42, 7516-7519 (2003).

 66. Byungwhan Kim, Suk Yong Lee, and Byung-Teak Lee, Etching of 4H-SiC in a NF3/CH4  inductively coupled plasma, Journal of Vacuum Science and Technology B. 21, 2455-2460 (2003).

 67. S. S. Kim and B.-T. Lee, Effects of oxygen pressure on the growth of pulsed laser deposited  ZnO thin films on Si(001), Thin Solid Films 446, 307-312 (2004).

 68. Il-Soo Kim, Sang-Hun Jeong, Sang Sub Kim and Byung-Teak Lee, Magnetron sputtering growth  and characterization of high quality single crystal ZnO thin films on sapphire substrates,  Semicond. Sci. Technol. 19, L29-L31(2004).

 69. Sang Sub Kim, Jong Ha Moon, Byung-Teak Lee, Oh Sung Song, and Jung Ho Je, Heteroepitaxial  growth behavior of Mn-doped ZnO thin films on Al2O3 (0001) by pulsed laser deposition, J.  Appl. Phys. 95, 454-459 (2004).

 70. Sang-Hun Jeong, Il-Soo Kim, Sang-Sub Kim, Jae-Keun Kim, and Byung-Teak Lee, Homo-buffer  layer effects and single crystalline ZnO hetero-epitaxy on c-plane sapphire by a conventional rf  magnetron sputtering, J. Cryst. Growth 264, 110-115 (2004).

 71. Sang-Hun Jeong, Il-Soo Kim, Jae-keun Kim, and Byung-Teak Lee, Quality improvement of ZnO  layer on LT-grown ZnO layer/Si (111) through a two-step growth using an RF magnetron  sputtering, J. Cryst. Growth 264, 327-333 (2004).

 72. S.-C. Ahn, S.-Y. Han, J. L. Lee, J.-H. Moon, and B.-T. Lee, A study on the reactive ion etching  of SiC single crystals using inductively coupled plasma of SF6-based gas mixtures, Metals and  Materials 10, 103-106 (2004).

 73. Jeong Woo Lee, Sang Sub Kim, Byung-Taek Lee, and Jong Ha Moon, Ge-doped SiO2 glass films  prepared by plasma enhanced chemical vapor deposition for planar waveguides, Applied Surface  Science 228, 271-276 (2004).

 74. Byungwhan Kim, Suk Yong Lee, and Byung-Teak Lee, Etching Profile of silicon carbide in a  NF3/CH4 Inductively Coupled Plasma, Microelectronic Engineering 71, 329-334 (2004).

 75. S.-Y. Hwang, J.-H. Park, H. J. Song, S. J. Jang, Su Hwan Oh, Moon Ho Park, J.-H. Kim, and B.-T.  Lee, Characterization of 3C-SiC Thin Films Grown on Si Surfaces Patterned with Various Periods  and Depths, J. Elect. Mat. 33, L11-L14 (2004).

 76. Jong Mo Im, Jong Ha Moon, Byung-Teak Lee, Sang Sub Kim, and Jin Hyeok Kim, Growth and  properties of Er-doped soda-lime glass films by radio-frequency magnetron sputtering, Metals  and Materials International 10, 275-279 (2004).

 77. Y.-S. Choi, J.-H. Park, S.-S. Kim, H.-J. Song, S.-H. Lee, and J.-J. Jung, B.-T. Lee, Effects of  dislocations on the luminescence of GaN/InGaN multi-quantum-well light-emitting-diode layers,  Materials Letters 58, 2614-2617 (2004).

 78. Byungwhan Kim, Sungmo Kim, and Byung-Teak Lee, Modeling SiC surface roughness using  neural network and atomic force microscopy, Journal of Vacuum Science and Technology B. 22,  2467-2472 (2004).

 79. Sang-Hun Jeong, Jae-Keun Kim, Bong-Soo Kim, Seok-Ho Shim, Byung-Teak Lee, Characterization  of SiO2 and TiO2 films prepared using rf magnetron sputtering and their application to anti-  reflection coating, Vacuum 76, 507-515 (2004).

 80. B. Kim and B. T. Lee, Prediction of SiC etching in a NF3/CH4 plasma using neural network,  Journal of Vaccum Science and Technology A 22, 2517-2522 (2004). 

 81. B. Kim and B.-T. Lee, Etching of 4H-SiC using a NF3 inductively coupled plasma, J. of  Electronic Materials 33, 1308-1312 (2004).

 82. B. Kim and B.-T. Lee, Pressure controlled surface roughness of SiC plasma etching, Surface  Engineering 20, 391-395 (2004).

 83. Veeramuthu Vaithianathan, Byung-Teak Lee, and Sang Sub Kim, Growth of phosphorus doped  ZnO thin films by pulsed laser deposition, phys. stat. sol. (a) 201, No. 12, 2837-2840 (2004).

 84. Veeramuthu Vaithianathan, Jung Ho Je, Byung-Teak Lee, and Sang Sub Kim, Epitaxial Growth of  Mn-doped ZnO Thin Films on Al2O3 (0001), Materials Science Forum 449-452, 493-496 (2004).

 85. S. S. Kim, J. H. Moon, B.-T. Lee, K. S. Sohn, T. S. Kang, and J. H. Je, Microstructures of pulsed  laser deposited Eu doped Y2O3 luminescent films on Si(001) substrates, Applied Surface Science  221, 231-236 (2004).

 86. Han Cheol Choe, Tae Soo Kang, Jung Ho Je, Jong Ha Moon, Byung-Teak Lee, and Sang Sub Kim,  Early stage heteroepitaxial growth of SrRuO3 films on SrTiO3 (001) depending on the growth  temperature during pulsed laser deposition, Thin Solid Films 474, 44-49 (2005).

 87. Jin Hyeok Kim, Yeon-A Shim, Taeun Kim, Youngman Kim, Jong-Ha Moon, and Byung-Teak Lee,  Substrate effects on the growth of epitaxial Pb(Mg1/3,Ta2/3)O3 thin films using chemical  solution deposition, Thin Solid Films 474, 109-113 (2005).

 88. B. Kim. D. Lee, N. Kim, and B.-T. Lee, Etching of oxynitride thin films using inductively-coupled  plasma, Journal of Vacuum Science and Technology A23, 520-524 (2005).

 89. Veeramuthu Vaithianathan, Byung-Teak Lee, and Sang Sub Kim, Preparation of As-doped p-type  ZnO films using a Zn3As2/ZnO target with pulsed laser deposition, Appl. Phys. Lett. 86, 062102  (2005).

 90. J. Y. Park, D. J. Lee, S. Y. Yun, Y. S. Hong, B.-T. Lee, J. H. Moon, and S. S. Kim, Synthesis of  ZnO Nanowalls on Al2O3 (0001) by Catalyst-Free MOCVD, Metals and Materials International 11,  165-168 (2005).

 91. J.Y. Park, D.J. Lee, S.Y. Yun, J.H. Moon, B.-T. Lee, and S.S. Kim, Temperature-induced  Morphological Changes of ZnO grown by MOCVD, J. Crystal Growth 276, 158-164 (2005).

 92. J.Y. Park, D.J. Lee, B.-T. Lee, J.H. Moon, and S.S. Kim, Improvement in Microstructure and  Crystal Alignment of ZnO Films Grown by MOCVD Using a Seed Layer, J. Crystal Growth 276, 165-  170 (2005).

 93. Dong Ju Lee, Jae Young Park, Young Su Yun, Yong Sung Hong, Jong Ha Moon, Byung-Teak Lee  and Sang Sub Kim, Comparative studies on the growth behavior of ZnO nanorods by metalorganic  chemical vapor deposition depending on the type of substrates, J. Crystal Growth 276, 458-464  (2005).

 94. T.-H. Kim, S.-H. Jeong, I.-S. Kim, S. S. Kim, and B.-T. Lee, Magnetron sputtering growth and  characterization of high quality single crystal Ga-doped n-ZnO thin films, Semiconductor Science  and Technology 20, L43-L46 (2005).

 95. B. Kim and B.-T. Lee, Prediction of silicon oxynitride plasma etching using a generalized  regression neural network, Journal of Applied Physics 98, 034912 (2005).

 96. B. Kim, S. Kim, and B.-T. Lee, Low pressure plasma etching of silicon carbide, Applied Physics  A: Materials & Processing 81, 793-797 (2005).

 97. Jae Young Park, In Ok Jung, Jong Ha Moon, Byung-Teak Lee, and Sang Sub Kim, Temperature  induced shape change of highly aligned ZnO nanocolumns, Journal of Crystal Growth 282, 353-358  (2005).

 98. V. Vaithianathan, Byung-Teak Lee, and Sang Sub Kim, Pulsed-laser-deposited p-type ZnO films  with phosphorus doping, J. Appl. Phys. 98 (04), 043519 (2005).

 99. B. Kim, K. K. Lee, and Byung-Teak Lee, Surface roughness of silicon carbide in a NF3  inductively coupled plasma, Vacuum 80, 343-349 (2005).

 100. B. Kim, B. T. Lee, and K. K. Lee, On the use of neural network to characterize the plasma  etching of SiON thin films, J. Materials Science: Materials in Electronics 16, 673-679 (2005).

 101. B. Kim, Jeong Kim, Soo Hong Lee, Jaeyoung Park, and Byung-Teak Lee, Plasma etching of  silicon oxynitride in a low pressure C2F6 plasma, J. Korean Physical Society 47, 712-715 (2005).

 102. B. Kim, B.-T. Lee, J. G. Han, N. J. Kim, S. Choi, and Seung Soo Han, Use of neural network to  model SiC etching in a NF3 inductively coupled plasma, Modeling and Simulation in Materials  Science and Engineering 13, 1267-1277 (2005)

 103. V. Vaithianathan, Sang Sub Kim, and Byung-Teak Lee, Realization of p-Type ZnO Using  Zn3As2 and Zn3P2 as Doping Source Materials, Electronic Materials Letters 1, 121-126 (2005).

 104. Veeramuthu Vaithianathan, Byung-Teak Lee, Chang-Hwan Chang, Kandasami Asokan, and Sang  Sub Kim, Characterization of As-doped, p-type ZnO by x-ray absorption near-edge structure  spectroscopy, Applied Physics Letters 88, 112103 (2006).

 105. Tae-Un Kim, Bo Ram Kim, Won-Jae Lee, Jong Ha Moon, Byung-Teak Lee, and Jin Hyeok Kim,  Integration of artificial SrTiO3/BaTiO3 superlattices on Si substrates using a TiN buffer layer by  pulsed laser deposition method, J. Crystal Growth 289, 540-546 (2006).

 106. B.-T. Lee, T.-H. Kim, and S.-H. Jeong, Growth and Characterization of single crystalline Ga-  doped ZnO films using an rf magnetron sputtering, J. Phys. D: Appl. Phys. 39, 957-961 (2006).

 107. Gun-Kyo Lee and Byung-Teak Lee, Inductively coupled plasma reactive ion etching of ZnO  using C2F6 and NF3-based gas mixtures, Semicond. Sci. Technol. 21 (2006) 971-974.

 108. B. Kim, Junki Bae, and Byung-Teak Lee, Modeling silicon oxynitride etch microtrenching using  neural network and genetic algorithm, Microelectronic Engineering (MEE), 83/3 (2006) 513-519.

 109. Veeramuthu Vaithianathan, Yong Hee Lee, Byung-Teak Lee, Shunichi Hishita and Sang Sub Kim,  Doping of As, P and N in laser deposited ZnO films, Journal of Crystal Growth 287, 85-88, (2006).

 110. Manoj Kumar, Tae-hwan Kim, Sang-Sub Kim and Byung-Teak Lee, Growth of epitaxial p-type  ZnO thin films by co-doping of Ga and N, Applied Physics Letters 89, 112103 (2006).

 111. J.-H. Park, S.-J. Jang, S.-S. Kim, and B.-T. Lee, Growth and characterization of single crystal  ZnO thin films using inductively coupled plasma metal organic chemical vapor deposition,  Applied Physics Letters 89, 121108 (2006).

 112. B. Kim, Junggi Bae, and B.-T. Lee, Microtrench depth and width of SiON plasma etching,  Vacuum 81, 338-343 (2006).

 113. B. Kim and B. T. Lee, Microtrench of oxynitride thin films in a C2F6 inductively coupled  plasma, Applied Surface Science 253, 1464-1468 (2006).

 114. B.-T. Lee, S.-H. Jeong, Myong-Ho Kim, Min-Ho Kuk, Dong-sik Bae, Tae-Kwon Song, and Won-  Jeong Kim, Growth and characterization of device quality ZnO on Si(111) and c-sapphire using a  conventional rf magnetron sputtering, Journal of Electroceramics 17, 305-310 (2006).

 115. N.-J. Kim, S.-Y. Lee, G.-K. Lee, J.-H. Moon and B.-T. Lee, Inductively coupled plasma reactive  ion etching of Ge-SiO2 and SiON using C2F6 and NF3-based gas mixtures, Solid State  Phenomena 124-126, 503-506 (2007).

 116. Il-Soo Kim, Sang Sub Kim, Cheul-Ro Lee, and Byung-Teak Lee, Magnetron sputtering growth  and characterization of high quality single crystal ZnO thin films on Si using GaN interlayer, J.  Crystal Growth 299, 295-298 (2007).

 117. Byungwhan Kim, Byung Teak Lee, and Jeon Gun Han, Surface roughness of silicon oxynitride  etching in C2F6 inductively coupled plasma, Solid-State Electronics 51, 366-370 (2007).

 118. Il-Soo Kim, Sang Sub Kim, and Byung-Teak Lee, Growth and characterization of high quality  homoepitaxial ZnO films by RF magnetron sputtering, Semiconductor Science and Technology 22,  683-686 (2007).

 119. Bo Ram Kim, Tae-Un Kim, Won-Jae Lee, Jong Ha Moon, Byung-Teak Lee, Hong Seung Kim and Jin  Hyeok Kim, Effects of periodicity and oxygen partial pressure on the crystallinity and dielectric  property of artificial SrTiO3/BaTiO3 superlattices integrated on Si substrates by pulsed laser  deposition method, Thin Solid Films 515, 6438-6441 (2007).

 120. Manoj Kumar and Byung-Teak Lee, Improvement of electrical and optical properties of Ga and  N co-doped p-type ZnO thin films with thermal treatment, Applied Surface Science 254, 6446-6449  (2008).

 121. Dong-Jin Kang, Jong-Ha Moon and Byung-Teak Lee, Inductively coupled plasma reactive ion  etching of sapphire using C2F6 and NF3-based gas mixtures, Materials Science in Semiconductor  Processing 11, 16-19 (2008).

 122. Seung-Ho Hwang, Tae-Hoon Chung and Byung-Teak Lee, Study on the interfacial layer in  ZnO/GaN heterostructure light-emitting diode, Materials Science and Engineering B. 157, 32-35  (2009).

 123. J.-H. Park, C.-B. Lee, I.-S. Kim, S.-J. Jang, and B.-T. Lee, Effects of growth variables on the  properties of single crystalline ZnO thin film grown by inductively coupled plasma metal organic  chemical vapor deposition, Thin Solid Films 517, 4432-4435 (2009).

 124. Il-Soo Kim and Byung-Teak Lee, Structural and optical properties of single crystal ZnMgO thin  films grown on sapphire and ZnO substrates by RF magnetron sputtering, Journal of Crystal  Growth 311, 3618-3621(2009).

 125. Hyung-Kyu Choi, Jang-Ho Park, Sang-Hun Jeong, and Byung-Teak Lee, Realization of As doped  p-type ZnO Thin Films Using Sputter Deposition, Semiconductor Science and Technology 24,  105003 (2009).

 126. Jang-Ho Park, Tae-Hwan Kim, Na-Young Chang, Jeong-Sun Kim, Geun-Hong Kim, and Byung-  Teak Lee, Microstructural investigation of Ti/Au Ohmic contacts on Ga doped single crystalline n-  ZnO films, Materials Science and Engineering B 167, 51-54 (2010).

 127. Jang-Ho Park, Ju-Hun Park, and Byung-Teak Lee, Effects of SiC buffer layer growth  temperature on the residual strain of GaN/SiC/Si thin films, Materials Letters 64, 1137-1139 (2010).

 128. Il-Soo Kim and Byung-Teak Lee, Design and growth of deep UV-range single crystalline  ZnMgAlO thin films lattice-matched to ZnO, Crystal Growth and Design 10, pp 3273–3276 (2010).

 129. Yong-Ik Nam and Byung-Teak Lee, Investigation of Ti/Au and Ti2N/Ti/Au Ohmic contacts on  n-GaN films, Semicond. Sci. Technol. 26, 085014 (2011).

 130. Il-Soo Kim, Jang-Ho Park, and Byung-Teak Lee, Growth and characterization of deep-UV range  ZnMgSrO thin films lattice-matched to ZnO, Thin Solid Films 519, 6579-6582 (2011).

 131. Jang-Ho Park, Ho-Yeon Seo, Sang-Hun Jeong and Byung-Teak Lee, Optical characterization of  magnetron sputtered p-type ZnO thin films co-doped with Ga and As, Physica Status Solidi (a)  209, 294–296 (2012).

 132. Min-Sung Kim and Byung-Teak Lee, Growth and characterization of single crystalline Zn0.8-xMg0.2AlxO films with UV bandgap on GaN/Al2O3 template by RF magnetron sputtering, Journal of Crystal Growth 364, 155–157 (2013).

 133. Jang-Ho Park, Hoang Ba Cuong, Sang-Hun Jeong, and Byung-Teak Lee, Growth and characterization of GroupⅡ-alloyed ZnAlO UV-range transparent conductive films prepared by RF magnetron sputtering, Vacuum 97 (2013) 15-19.

  134. Jang-Ho Park, Jin-Bum Lim, and Byung-Teak Lee, Optical and electrical properties of sputter deposited ZnMgAlO UV-range transparent conducting films, Semicond. Sci. Technol. 28 (2013) 065004.

  135. S.H. Kim, D.G. Kim, B.H. Lee, T.U. Kim, H.C. Ki, H.J. Kim, Y.W. Choi, and B.-T. Lee, SPR properties of 2D ZnO nano-holes fabricated by laser interference lithography, Electronics Letters, 49 (2013), 11th April 2013, No. 8, p551.

  136. Jang-Ho Park, Nae-Sang Yoon and Byung-Teak Lee, Effects of Growth Variables on the Properties of Deep-UV ZnMgAlO Thin Films Lattice Matched to ZnO, J. Crystal Growth, 381 (2013), 160–164.

  137. Jang-Ho Park, Hoang Ba Cuong, Sang-Hun Jeong, and Byung-Teak Lee, Co-doping effects of Mg and Be on properties of ZnMgBeGaO UV-range transparent conductive oxide films prepared by RF magnetron sputtering, J. Alloys and Compounds, 615 (2014), 126-130.

  138. Sang-Hun Jeong, Jang-Ho Park, and Byung-Teak Lee, Doping effects of group-IIIA elements on physical properties of ZnMgXO(X:Al,Ga,In,Tl) transparent conducting oxide films prepared by RF magnetron sputtering, J. Alloys and Compounds, 617 (2014), 52-57.

  139. Sang-Hun Jeong, Jang-Ho Park, and Byung-Teak Lee, Effects of Mg doping rate on physical properties of Mg and Al co-doped Zn1-x-0.02MgxAl0.02O transparent conducting oxide films prepared by rf magnetron sputtering, J. Alloys and Compounds, 617 (2014), 180-184.

  140. Hoang Ba Cuong, Che-Sin Lee, and Byung-Teak Lee, Effects of Ga concentration, process conditions, and substrate materials on properties of ZnMgBeGaO UV-range transparent conducting films, Thin Solid Films 573 (2014), 95-99.

  141. Che-sin Lee, Hoang Ba Cuong, Sang-Hun Jeong, and Byung-Teak Lee, Comparative study of group-II alloying effects on physical property of ZnGaO transparent conductive films prepared by RF magnetron sputtering,J. Alloys and Compounds 645 5 October(2015), 322-327.

  142. Hoang Ba Cuong and Byung-Teak Lee, Effects of oxygen partial pressure on the characteristics of magnetron sputtered ZnMgBeO thin films,Applied Surface Science 355 15 November(2015), 582-586.

  143. Ngoc Minh Le and Byung-Teak Lee, ZnMgBeO/Ag/ZnMgBeO transparent multilayer films with UV energy bandgap and very low resistance,Ceramics International 42 4 March(2016), 5258-5262.

  144. Hoang Ba Cuong, Che-Sin Lee, Sang-Hun Jeong, and Byung-Teak Lee, Realization of highly conductive Ga-doped ZnO film with abnormally wide band-gap using magnetron sputtering by simply lowering working pressure, Acta Materialia 130 47-55 (2017).

  145. Hoang Ba Cuong, Ngoc Minh Le, Sang-Hun Jeong, Byung-Teak Lee, Tailoring of composition, band-gap, and structural phase in ZnMgO films by simply controlling growth temperature and oxygen partial pressure during sputter deposition, J. Alloys and Compounds, 709 54-63 (2017).

  146. Seon Hoon Kim, Tae Un Kim, Haeng Yun Jung, Hyun Chul Ki, Doo Gun Kim, and Byung-Teak Lee, The Effect of Au/Ag Bimetallic Thin-Films on Surface Plasmon Resonance Properties Comparing with Those of Au and Ag Single Thin-Films, to be published in the Journal of Nanoscience and Nanotechnology Vol. 17, 2017

  147. Ngoc Minh Le and Byung-Teak Lee, “Highly conducting and highly transparent oxide/metal/oxide structures for ultraviolet-C light sources utilizing a thin Cu wetting interlayer”, to be published in the ACS Applied Materials & Interfaces.

 
 

* 국내학술지 게재, Korean Journals

 1. 이병택, 이재영, 김대룡, 남인탁, "수소를 포함하고 있는 3원계 합금에 있어서 Enthalpy 및  Entropy Interaction Parameter의 물리화학적 의의에 대한 고찰", 대한금속학회지 18권, 453 (1980)

B.-T. Lee, J. Lee, D. Kim and I. Nam, Physical Significance of Enthalpy and Entropy Interaction Parameter in Ternary Solid Solutions Containing Hydrogen, J. Korean Inst. Metals 18, 453 (1980)

 

2. 이병택, 노광현, "La-Ni-M 삼원계 금속간화합물의 수소화합물 생성열의 예측", 대한금속학회지 20권, 370 (1982)

B.-T. Lee and K. Ro, Prediction of Enthalpy of Hydride Formation of La-Ni-M Ternary Intermetallic Compounds, J. Korean Inst. Metals 20, 370 (1982)

 

3. 이병택, 이정용, "GaAs 내에 존재하는 쌍정의 투과전자현미경 관찰 및 전산모사", 대한금속학회지 29권, 11 (1991).

B.-T. Lee and J.Y. Lee, High Resolution Transmission Electron Microscopy Observation and Image Simulation Study of Twins in GaAs, J. Korean Inst. Metals 29, 11 (1991)

 

4. 박충년, 최전, 이병택, 정원용, "Nd-Fe-B계 영구자석용 합금의 수소 흡수-방출 싸이클링에 따른 합금의 미세화 및 퇴화 현상", 대한금속학회지 29권, 1047 (1991)

C.N. Park, J. Choi, B-T. Lee, and W.Y. Jeung, Pulverization and Degradation Phenimena in Nd-Fe-B Permanent Magnetic Alloys upon the Hygrogen Absorption-Desorption Cycling, J. Korean Inst. Metals 29, 1047 (1991)

 

5. 정이선, 안주헌, 장일호, 이병택, 이형종, 장성주, "액상 에피탁시 법에 의한 1.1 μm InGaAsP/InP 박막의 성장에 관한 연구", 새물리 31권, 436 (1991).

Y.-S. Chung, J.-H. Ahn, I.-H. Chang, B.-T. Lee, H.-J. Lee, and S.-J. Chang, Liquid Phase Epitaxial Growth of 1.1 μm InGaAsP on InP, Sae Mulli 31, 436 (1991).

 

6. 장일호, 안주헌, 이병택, 이운상, 전은숙, 이형종, "1.1 μm LPE InGaAsP/InP 광도파로의 제작 및 광특성 측정에 관한 연구", 새물리 32권, 532 (1992).

I.-H. Chang, J.-H. An, B.-T. Lee, U.-S. Lee, E.-S. Jeon, and H.-J. Lee, Fabrication and Optical Characterization of 1.1 μm InGaAsP on InP Waveguide, Sae Mulli (New Physics) 32, 532(1992)

 

7. 이병택, 김동근, 박인식, 장성주, "Bulk GaAs의 열처리에 있어서 전위 및 미세석출물의 거동", 응용물리 6권, 21 (1993).

B.-T. Lee, D.-K. Kim, I.-S. Park, and S.-J. Jang, Behavior of Dislocations and Precipitates during the Bulk Annealing of GaAs, Ungyong Mulli (Applied Physics) 6, 21(1993)

 

8. 장성주, 김동근, 이병택, 이종람, "Transient-mode 액상 에피택시법을 이용한 MBE-coated GaAs/Si 기판 상의 GaAs 박막 성장", 응용물리 6권, 305 (1993).

S.J. Chang, D.-K. Kim, B.-T. Lee, and J.-L. Lee, Transient-mode Liquid Phase Epitaxial Growth of GaAs Layers on MBE-coated GaAs/Si Substrates, Ungyong Mulli (Applied Physics) 6, 305 (1993)

 

9. 안주헌, 채승욱, 이병택, 전은숙, 이형종, "Rib형 InGaAsP/InP 광도파로의 박막조성에 따른 도파모드 특성변화", 응용물리 6권, 325 (1993).

J.-H An, S.-U. Chae, B.-T. Lee, E.-S. Jeon, and H.-J. Lee, Effects of Quaternary Compositioon on the Propagation Characteristics of the InGaAsP/InP Rib Optical Waveguides, Ungyong Mulli (Applied Physics) 6, 325 (1993).

 

10. 김동근, 이형종, 차상석, 임기영, 장성주, 김종빈, 이병택, "액상에피탁시 방법에 의한 InP 기판 상의 GaAs 이종접합 박막 성장", 한국재료학회지 4권, 601 (1994).

D.-K. Kim, H.J. Lee, S.S. Cha, K.Y. Lim, S.J. Jang, J.B. Kim, and B.-T. Lee, Liquid Phase Epitaxial Growth of GaAs Layers on InP Substrates, Korean J. Mat. Res. 4, 601 (1994).

 

11. 이병택, 안주헌, 김동근, 안병찬, 남산, 조경익, 박인식, 장성주, "선택적 LPE 방법에 의한 GaAs 기판 상의 InP 이종접합 박막의 성장", 한국재료학회지 4권, 687 (1994).

B.-T. Lee, J.-H. Ahn, D.-K. Kim, B.-C. Ahn, S. Nahm, K.-Y. Cho, and S.J. Jang, Growth of Heteroepitaxial InP/GaAs by Selective Liquid Phase Epitaxy, Korean J. Mat. Res., 4, 687 (1994).

 

12. 안주헌, 김동근, 안병찬, 이병택, 전은숙, 김한수, 이형종, 우정주, "InGaAsP/InP 광도파로 방향성결합기의 설계 및 제작", 응용물리 8권, 6 (1995).

J.-H. Ahn, D.-K. Kim, B.-C. Ahn, B.-T. Lee, E.-S. Jeon, H.-S. Kim, H. J. Lee and J.-J. Woo, Fabrication of InGaAsP/InP Waveguide Directional Coupler, Ungyong Mulli (Applied Physics) 8, 6 (1995).

 

13. 차상석, 신용규, 전형일, 김재연, 서은경, 임기영, 이영희, 이형재, 김동근, 이병택, "MOCVD에 의해 자연적으로 성장된 AlGaAs/AlGaAs 다층구조의 DCXD 로킹곡선 분석", 새물리 35권, 153 (1995).

S.S. Cha, Y.S. Shin, H.I. Jeon, J.Y. Kim, E.-K. Suh, K.Y. Lim, Y.H. Lee, D.K. Kim and B.-T. Lee, DCXD Rocking Curve Analysis of Spontaneously Formed AlGaAs/AlGaAs Multi-layer Structure Grown by MOCVD, Sae Mulli (New Physics) 35, 153 (1995).

 

14. 전은숙, 김한수, 안병찬, 이병택, 안주헌, 오대곤, 오광룡, 장성주, 김상덕, "Beam Propagation 방법과 반응성 이온 에칭을 이용한 InGaAsP/InP 광도파로 방향성결합기의 설계 및 제작" 응용물리 8권, 503 (1995).

E.-S. Jeon, H.-S. Kim, B.-C. Ahn, B.-T. Lee, J.-H. Ahn, D.-K. Oh, K.-R. Oh, S.-J. Jang, and S.-D. Kim, Fabrication of a InGaAsP/InP Waveguide Directional Coupler, Ungyong Mulli (Applied Physics) 8, 503 (1995).

 

15. 김한수, 안병찬, 최익수, 김동근, 이병택, 안주헌, 오광룡, 정원국, “Strip-loaded 형 InGaAsP/InP 광도파로의 도파층 구조에 따른 도파 모우드 특성, 도파로 광섬유 삽입손실 및 광구속 강도의 변화”, 새물리 36권, 105 (1996).

Han-Soo Kim, Byoung-Chan Ahn, Ik-Soo Choi, Dong-Keun Kim, and Byung-Teak Lee, Joo-Heon Ahn, Kwang Ryong Oh, and Won-Kuk Chung, Effects of Guiding Layer Structures on the Characteristics of InGaAsP/InP Strip-loaded Waveguides, Sae Mulli (New Physics) 36, 105 (1996).

 

16. 김홍습, 황윤택, 김재연, 이형재, 황인선, 박해용, 이병택, “분자선 증착법으로 성장한 변형완화된 SiGe 버퍼의 전위 분석” 응용물리 9권, 362 (1996).

Hong Seub Kim, Yun Teak Hwang, Jae Yon Kim, Hyung Jae Lee, In Sun Hwang, Hae Yong Park, and Byung-Teak Lee, Characterization of Dislocations in Strain-Relaxed SiGe Buffers Grown by Molecular Beam Epitaxy, UngYong Mulli 9, 362 (1996).

 

17. 이병택, 김동근, 박종삼, 안병찬, 안주헌, 오대곤, “CH4/H2 반응성 이온 에칭된 InP 메사 주위의 표면손상 및 오염”, 응용물리 9권, 500 (1996).

B.-T. Lee, D.-K. Kim, J.-S. Park, B.-C. Ahn, J.-H. Ahn, and D. G. Oh, Surface Damage and Contamination Around CH4/H2 Reactive Ion Etched InP Mesas, UngYong Mulli 9, 500 (1996).

 

18. 이호종, 이병택, 최답천, “Cr과 Si이 복합 첨가된 TiAl 금속간 화합물의 미세구조 및 기계적 성질에 관한 연구”, 대학금속학회 35권, 951 (1997).

H.J. Lee, B.-T. Lee, and D.-C. Choi, Microstructure and Mechanical Properties of TiAl Intermetallic Compounds Contaning Cr and Si, J. Korean Inst. Met. Mater. 35, 951 (1997).

 

19. 서영훈, 김광철, 남기석, 김동근, 이병택, 서은경, 이형재, “성장변수가 3C-SiC(111) 박막의 결정성에 미치는 영향”, 한국재료학회지 7권, 679 (1997)

Y.H. Seo, K.C. Kim, K.S. Nahm, D.-K. Kim, B.-T. Lee, E.K. Suh and H.J. Lee, The Effect of Growth Parameters on Crystal Quality of 3C-SiC (111) Thin Film, Korean J. Mat. Res. 7, 679 (1997).

 

20. 김동근, 이병택, 문찬기, 김재근, 장성주, “화학증착 방법으로 Si (001) 기판 상에 성장된 3C-SiC 이종접합 박막의 투과전자현미경 및 라만 특성분석”, 한국재료학회지 7권, 654 (1997)

D.-K. Kim, B.-T. Lee, C. K. Moon, J. K. Kim, K. S. Nahm, H. J. Lee, and S. J. Jang, TEM and Raman Spectrum Charactrization of 3C-SiC/Si(001) Heterostructure Grown by Chemical Vapor Deposition, Korean J. Mat. Res. 7, 654 (1997).

 

21. 최익수, 이병택, 김동근, 박종삼, “Cl2/CH4/H2 혼합기체를 이용한 InP 소재의 반응성 이온 에칭에 관한 연구”, 한국진공학회지 6권, 282 (1997)

Ik-Soo Choi, Byung-Teak Lee, Dong-Keun Kim, Jong-Sam Park, Reactive Ion Etching of InP Using Cl2/CH4/H2 Discharges, J. Korean Vac. Soc. 6, 282 (1997).

 

22. 문찬기, 김동근, 이병택, 김재근, 방욱, 김형준, 장성주, 유수창, “3C-SiC/Si 이종접합 박막에 있어서 라만산란 및 투과전자현미경 비교 분석”, 응용물리 11권, 296 (1998)

C. K. Moon, D.-K. Kim, B.-T. Lee, J. K. Kim, W. Bahng, H.-J. Kim, S. J. Jang, S.-C. Ryu, "Raman Scattering Spectroscopy and TEM Characterization of 3C-SiC/Si Heterostruc- ture Thin Films", UngYong Mulli 11, 296 (1998).

 

23. 박철희, 이병택, 김호성, “CH4/H2 도결합 플라즈마를 이용한 InP의 건식 식각에 관한 연구”, 한국진공학회지 7권 2호, 161 (1998)

Chul-Hee Park, Byung-Teak Lee, Ho-Sung Kim, Reactive Ion Etching of InP Using CH4/H2 Inductively Coupled Plasma, J. Korean Vac. Soc. 7, 161 (1998).

 

24. 신양수, 이병택, “열처리에 따른 W 박막과 6H-SiC의 계면반응에 관한 연구”, 한국재료학회지 8권 6호, 545 (1998)

Yang-Soo Shin and Byung-Teak Lee, Interfacial Reactions between W Thin Film and 6H-SiC during Heat Treatments, Korean J. Mat. Res. 8, 161 (1998).

 

25. 문찬기, 이병택, 김재근, 박주훈, 장성주, 유지범, “SOI 기판 상의 3C-SiC 화학기상증착 성장에 관한 연구”, 응용물리 12, 224 (1999)

C. K. Moon, B.-T. Lee, J. K. Kim, J. H. Park, S. J. Jang, and J. B. Yoo, Growth of epitaxial 3C-SiC films on SOI substrates by CVD, UngYong Mulli 12, 224 (1999).

 

26. 김종민, 문종하, 이병택, "마그네트론 스퍼터링 증착 조건에 따른 SnO2 박막의 미세구조와 가스검지특성 변화", 한국재료학회지 11, 1083 (1999)

Jong Min Kim, Jonh-Ha Moon and Byung-Teak Lee, Effects of Process Variables on the Microstructure and Gas Sensing Characteristics of Magnetron Sputtered SnO2 Thin Films, Korean J. Materials Research 11, 1083 (1999).

 

27. 이병택, 박철희, 김성대, 김호성, "BCl3/O2/Ar 유도결합 플라즈마를 이용한 InP의 건식 식각에 관한 연구", 한국진공학회지 8, 541~547 (1999)

B.-T. Lee, C.-H. Park, S.-D. Kim, and H.-S. Kim, Reactive Ion Etching of InP Using BCl3/O2/Ar Inductively Coupled Plasma, J. Korean Vac. Soc. 8, 541~547 (1999).

 

28. 김성대, 정석용, 이병택, 허증수, “BCl3/H2/Ar 유도결합 플라즈마를 이용한 GaN의 건식 식각에 관한 연구”, 한국재료학회지 10, 179~183 (2000)

Sung-Dae Kim, Seog-Yong Jung, Byung-Teak Lee, and Jung-Su Huh, Reactive Ion Etching of GaN Using BCl3/H2/Ar Inductively Coupled Plasma, Korean J. Materials Research 10, 179~183 (2000).

 

29. 하우종, 문종하, 이병택, 박현수, “분위기 열처리가 Ca-doped YCrO3의 전기적 특성에 미치는 영향”, 한국재료학회지 10, 540~544 (2000)

W.J. Ha, J.H. Moon, Byung-Teak Lee, H.S. Park, Effects of Atmospheric Annealing on the Densification and Electrical Properties of Ca-doped YCrO3, Korean J. Materials Research 10, 540~544 (2000).

 

30. 성경필, 최동수, 김진혁, 문종하, 명태호, 이병택, “Al2O3 표면보호층이 박막형 SnO2 가스센서의 감지특성에 미치는 영향”, 한국재료학회지 10, 778~783 (2000)

K.P. Seong, D. Choi, J.H. Kim, J.-H. Moon, T.-H. Myoung, and B.-T. Lee, Effects of Al2O3 Surface Protective Layer on the Sensing Properties of SnO2 Thin Film Gas Sensors, Korean J. Materials Research 10, 778~783 (2000).

 

31. 김선훈, 박신철, 김진혁, 문종하, 이병택, “기판 종류에 따른 박막형 SnO2 가스 센서의 응답특성”, 한국재료학회지 13, 111~114 (2003).

Seon-Hoon Kim, Shin-Chul Park, Jin-Hyuk Kim, Jong-Ha Moon, and Byung-Teak Lee, Effects of substrate on the characteristics of SnO2 thin film gas sensors, Korean J. Materials Research 13, 111~114 (2003).

 
 

* 해외 학회발표 및 논문집, Presentations and proceedings

1.  B.-T. Lee, T.D. Sands, R. Gronsky and E.D. Bourret, TEM Study of Precipitates in In-doped GaAs, Proceeding of the 13th Int. Symp. GaAs Related Compounds, Las Vegas, Nevada, September 1986.

2.  B.-T. Lee, Study of Dislocation Loops in Arsenic-rich As-grown GaAs, in Proceeding of the 45th Annual meeting of the Electron Microscopy Society of America, ed. G.W. Bailey, San Fransisco Press, 350 (1987).

3. E.D. Bourret, A.G. Elliott, B.-T. Lee and J.M. Jaklevic, Structural Characterization of Undoped and Doped GaAs: A Comparative Study of Four Techniques, in Defect Recognition and Image Processing in III-V Compounds II, ed. E. Weber, 95 (1987).

4.  B.-T. Lee, Effects of Heat Treatment on the Structural Defects and Electrical Properties of GaAs, Int. Conf. Materials Engg. for Resources, November 1991, Akita, Japan.

5. R.A. Logan, B.-T. Lee, R.F. Karlicek, Jr., and S.N.G. Chu, Buried Heterostructure Lasers Based on InGaAsP/InP, Proceeding of SPIE vol 1851, Los Angeles CA, Jan. 1993.

6. R.A. Logan, B.-T. Lee, R.F. Karlicek, Jr., and S.N.G. Chu, Buried Heterostructure Lasers Based on InGaAsP/InP, EW-MOVPE V 1993, Malmo, Sweden, paper B3, 1993.

7.  Y.K. Chen, T. Tanbun-Ek, B.-T. Lee, M.C. Wu, R.A. Logan, A. Tate, L. Fan, and A.M. Sergent, Monolithic 1.5  m Semiconductor Ring Lasers Grown by Selective Area Epitaxy, CLEO'93, Boston, paper CWG4.

8. T.R. Hayes, B.-T. Lee, T. Tanbun-Ek, R.A. Logan, M.F. Vernon and R.A. Gottscho, Photo-luminescence Study of Residual Damage after MOCVD Overgrowth on Reactive Ion Etched InP, Electrochemical Society Meeting, May 1993, Hawaii.

9.  R.A. Logan, B.T. Lee, and R.F. Karlicek, Jr., Full Wafer Processing for Buries Heterostructure Lasers, IEEE LEOS '93, November 1993, San Jose, CA.

10. B.-T. Lee and R.A. Logan, Growth of InP on Patterned Substrates Using AP-MOVPE, Sixth Int. Conf. InP and Related Materials, March 1994, Santa Barbara, CA.

11. D.-K. Kim, H.J. Lee, and B.-T. Lee, LPE Growth and Characterization of GaAs Layers on InP Substrates, MRS Proceeding v340, 1994 Spring Meeting, April 1994, San Fransisco, CA, USA.

12. B.-T. Lee, J.-S. Park, B.-C. Ahn, E.-S. Jeon, J.-H. Ahn, and D. J. Seo, Surface Damage And Contamination Around CH4/H2 Reactive-ion-etched InP Mesas Using SiO2 And Ti/Au Masks, 1995 MRS Fall Meeting, November 1995, Boston, MA, USA.

13. J.H. Ahn, K.R. Oh, C.D. Park, S.W. Lee, J.S. Kim, H.M. Kim, K.E. Pyun, H.M. Park, D.K. Kim, and B.-T. Lee, Fabrication of InGaAsP/InP Integrated Laser With Butt-coupled Passive Waveguide Using Reactive Ion Etching, 1995 MRS Fall Meeting, November 1995, Boston, MA, USA.

14.  B.-T. Lee, D.-K. Kim, J-H. Ahn and D.-G. Oh, Investigation of Surface Oxide Films On InP Mesa Sidewalls and Flat Surfaces Reactive Ion Etched Using CH4/H2 Chemistry, Eighth Int. Conf. on InP and Related. Mat., April 1996, Schwabisch Gmund, Germany

15. J.H. Ahn, K.R. Oh, C.D. Park, S.W. Lee, J.S. Kim, H.M. Kim, K.E. Pyun, H.M. Park, D.K. Kim, and B.-T. Lee, Succesful Utilization of CH4/H2 RIE for the Fabrication of 1.3  m InGaAsP/InP Integrated Laser with Butt-coupled Passive Waveguides, Eighth Int. Conf. on InP and Related. Mat., April 1996, Schwabisch Gmund, Germany.

16. B.-T. Lee, D.-K. Kim, Y.H. Seo, K.S. Nahm, S. Nishino, K.-W. Lee, Y. Kim, and S.J. Jang, Transmission Electron Microscopy Analysis of Heteroepitaxial Cubic SiC/Si Films CVD-Grown From Single-source Precursors, The 8th Seoul Int. Symp. Phys. Semicon. Appl., October 1996, Seoul, Korea.

17. Y.H. Seo, K.C. Kim, H.W. Shim, K.S. Nahm, E.-K. Suh, H.J. Lee, Y.G. Hwang, D.-K. Kim, and B.-T. Lee, The Mechanism of Void Formation in the Growth of 3C-SiC Thin Film on Si Substrate, SCRM 1997.

18. Y.-S. Shin and B.-T. Lee, Interfacial Reactions between Al, Ti, and Ti/Al AND 6H-SiC during Heat Treatments, MRS Fall Meeting, December 1997, Boston, MA, USA.

19. C.K. Moon, B.-T. Lee, D.-K. Kim, J.K. Kim, W. Bang, H.J. Kim, Y.H. Seo and K.S. Nahm, Raman Spectrodcopy and TEM Characterization of 3C-SiC/Si Heterostructure, MRS Fall Meeting, December 1997, Boston, MA, USA.

20. B.-T. Lee, C.-K. Moon, D.-K. Kim, and J.-K. Kim, Growth of SiC Films on SOI Substrates, IUMRS-ICEM-1998, August 1998, Cheju, Korea

21. K.-P. Seong, J.-H. Moon, J.-H. Kim, and B.-T. Lee, Effects of AFD-grown Surface Layers on the Properties of SnO2 Thin Film Gas Sensors, 8th International Conf. on Chemical Sensors, July 2000, Basel, Swiss

22. S.-M. Kong and B.-T. Lee, Reactive Ion Etching of SiC Using C2F6 Inductively Coupled Plasma, MRS Fall Meeting, December 2000, Boston, MA, USA.

23. S.-M. Kong, H.-J. Choi, B.-T. Lee, S.-Y. Han, and J. L. Lee, Inductively coupled plasma reactive ion etching of SiC single crystals using C2F6/O2 and NF3/Ar gas mixtures, Electronic Materials Conference, July 2001, Notre Dame, In, USA.

24. H. J. Choi, J. H. Park, and B.-T. Lee,  A Study on the Reactive Ion Etching of SiC Single Crystals Using Inductively Coupled Plasma of NF3-based Gas Mixtures, International Conference on Silicon Carbide and Related Materials 2001, October 2001, Tsukuba, Japan.

25. S. Y. Han, K. Kim, N. K. Kim, J. Y. Shin, B. T. Lee, E. D. Kim, and J. L. Lee, Microstructural Interpretation of Ni Ohmic Contact on n-type 4H-SiC, International Conference on Silicon Carbide and Related Materials 2001, October 2001, Tsukuba, Japan.

26. S.-H. Chung, B.-S. Kim and B.-T. Lee, Preparation of SiO2 and TiO2 Films Using the Magnetron Sputtering, IUMRS-ICEM 2002, June 2002, Xian, China

27. S.-C. Ahn and B.-T. Lee, Mesa Shape control during the Inductivity Coupled Plasma-Reactive Ion Etching of SiC single crystals, IUMRS-ICEM 2002, June 2002, Xian, China.

28. Sang-Hun Kim, Jeong-Woo Lee, Jong-Ha Moon, Byung-Teak Lee, and Jin Hyeok Kim, Fabrication of SiO2-Na2O-B2O3+xwt%Al2O3 Glass Thin Films with a Low Melting Temperature using Aerosol Flame Deposition Method, IUMRS-ICEM 2002, June 2002, Xian, China.

29. Chae-Hwan Cheong, Jong-Ha Moon, Byung-Teak Lee, and Jin Hyeok Kim, "Application of the planar optical waveguide prepared by ion-exchange method to the manufacturing and characterization of an optical oxygen gas sensor" The 8th international conference on electronic materials, June 10-14,  Xian, China (2002).

30. Dae-Soo Jeong, Yeon-Ah Shim, Jong-Ha Moon, Byung-Teak Lee, and Jin Hyeok Kim, "Heteroepitaxial growth of Pb(Mg1/3Ta2/3)O3 thin films on SrTiO3 substrates using Chemical Solution Deposition; Microstructural Evolution" The 8th international conference on electronic materials, June 10-14,  Xian, China (2002).

31. D.-S. Jeong, Y.-A. Shim, J.-H. Moon, and J.H. Kim, "Substrate Effects on the Formation of Perovskite Pb(Mg1/3Ta2/3)O3 Thin Films Using Chemical Solution Deposition,"15th Int. Congress on Electron Microscopy, September 2002, Durban, South Africa.

32 Y. S. Choi and B.-T. Lee, "Comparison of dislocation density measurement techniques for GaN, MRS Fall Meeting,"December 2002,  Boston, MA, USA

33. S. C. Ahn and B.-T. Lee, "Control of Mesa Sidewall Angle during the ICP-RIE of SiC,"MRS Fall Meeting, December 2002, Boston, MA, USA.

34. Byung-Teak Lee, Jong-Yoon Shin, Sang-Yoon Han, and Jong Lam Lee, "Stable Ohmic Contact for p-type 6H0SiC using Ti/Al and TiN/Al Thin Films,"MRS Fall Meeting, December 2002,  Boston, MA, USA.

35. Byung-Teak Lee, S.-M. Kong, H.-J. Choi, and S.C. Ahn, "Inductively coupled plasma Reactive ion etching of SiC single crystals"1st Thailand/Korea Workshop on Electronic Materials and Device Processing, January 2003,  Bangkok, Thailand.

36. J.-H. Park and B.-T. Lee, "Effect of SOI substrates on the residual strain of heteroepitaxial 3C-SiC thin films on Si"First Asia-Pacific Workshop on Widegap Semiconductors, March 2003,  Awaji, Japan.

37. Byung-Teak Lee, Ju-Hoon Park, Il-Soo Kim, and Sung-Yeon Hwang, "Growth and Characterization of Heteroepitaxial SiC and ZnO Films on Si Substrates Using Various Interface Patterning and Buffer Layers (Invited) "International Conference on the Characterization and Control of Interfaces for High Quality Advanced Materials 2003, september2003,  Kurashiki, Japan.

38. Il-Soo Kim, Sang-Hun Jeong, Sang-Sub Kim, and Byung-Teak Lee, "Effects of low-temperature buffer layer on the quality of RF magnetron sputtering grown ZnO/Si films "The 30th International Symposium on Compound Semiconductors, August 2003,  San Diego, U. S. A.

39. sung-Yun Hwang, S. J. Jang, C. K. Moon, J. H. Park, B.-T. Lee, "Effects of Substrate Surface Pattern on the Crystal Quality of SiC/Si Films Grown by Chemical Vapor Deposition(CVD) "ICMAT2003, December 2003,  Singapore.

40. Ju-Hoon Park, Suk-Yong Lee, Sung-Yun Hwang, Sung-Ju Jang, Chan-Ki Moon, and Byung-Teak Lee,"Effects of SOI Substrate on the Internal Stress of Heteroepitaxy 3C-SiC Thin Films on Si "ICMAT2003, December 2003,  Singapore.

41. Il-Soo Kim, S. H. Jeong, B.-T. Lee, "Growth of High quality ZnO film on Si(111) substrate grown by RF magnetron sputtering"ICMAT2003, December 2003,  Singapore.

42. Il-Soo Kim, Sang-Hun Jeong, and Byun-Teak Lee, "Growth and characterization of high quality ZnO thin films "The 2nd KOSEF-NRCT Electronic Materials and Device Processing Workshop, Jan 2003,  Yusung, Korea.

43. J.-H. Park, Y.-S. Choi, and B.-T. Lee, Effects of dislocations on the luminescence of GaN/InGaN muti-quantum-well light-emitting-diode layers, ISBLLED2004, March 2004, Gyungju, Korea.

44. S. H. Shim, S. H. Jeong, and B.-T. Lee, Characterization and preparation of high crystalline quality Ga-doped ZnO using RF magnetron sputtering, Photonics ASIA APOC, November 2004, Beijing, China.

45. K. H. Ko and B.-T. Lee, Growth and characterization of Zn1-xMgxO/Al2O3 films by RF magnetron sputtering, Photonics ASIA APOC, November 2004, Beijing, China.

46. N. J. Kim and B.-T. Lee, Inductively coupled plasma reactive ion etching of SiON suing C2F6-based gas mixtures, Photonics ASIA APOC, November 2004, Beijing, China.

47. T.-H. Kim and B.-T. Lee, Growth of Ga-doped n-ZnO Films and Ohmic Contact Formation Using Ti/Au and Ti/Al, Third International Conference on Materials for Advanced Technologies, July 2005, Singapore.

48. G. K. Lee and B.-T. Lee, Inductively coupled plasma reactive ion etching of ZnO using C2F6-based gas mixtures, Third International Conference on Materials for Advanced Technologies, July 2005, Singapore.

49. S. S. Kim, Y. H. Lee, J. Y. Park, and B.-T. Lee, Doping of As, P, and N in laser deposited ZnO films, Third International Conference on Materials for Advanced Technologies, July 2005, Singapore.

50. J. Park, S. Jang, S. Kim and B.-T. Lee, High quality single crystal ZnO thin film growth and characterization using PE-MOCVD, Fifth International Conference on Solid State Lighting, July 2005, San Diego, U.S.A.

51. I. Kim, S. Kim and B.-T. Lee, Growth and characterization of sputtered ZnO films on various substrates, Fifth International Conference on Solid State Lighting, July 2005, San Diego, U.S.A.

52. Chang-Bae Lee, Ju-Hoon Park, Byung-Teak Lee, Growth and Characterization of undoped and Ga doped ZnO films using PE-MOCVE, E-MRS IUMRS ICEM 2006 SPRING MEETING, Nice, France, May 2006.

53. Dong-Jin Kang, Gun-Kyo Lee, Byung-Teak Lee, Inductively coupled plasma reactive ion eatching of ZnO using C2F6 and BCl3-based gas plasma, E-MRS IUMRS ICEM 2006 SPRING MEETING, Nice, France, May 2006.

54. Il-Soo Kim, Sang Sub Kim, and Byung-Teak Lee, Growth and characterization of homoepitaxial ZnO films on ZnO substrates by r. F. magnetron sputtering, IUMRS-ICA-2006, Jeju, Korea, September 10-14, 2006.

55. Tae-Hwan Kim, Byung-Teak Lee, Ohmic contacts to Ga doped n-type ZnO using Ti/Au and Ti/Al/Au, IUMRS-ICA-2006, Jeju, Korea, September 10-14, 2006.

56. Nam-Jung Kim, Suk-Yong Lee, Gun-Kyo Lee, Jong-Ha Moon, and Byung-Teak Lee, Inductively coupled plasma reactive ion etching of Ge-SiO2 and SiON using C2F6 and NF3-based gas mixtures, The 4th International Workshop on znO and Related Materials, University of Giessen, Germany, October 3-6, 2006.

57. Il-Soo Kim, Tae-Hwan Kim, Sang-Hun Jeong, Manoj Kumar, Sang Sub Kim and Byung Teak Lee, Growth and Charaterization of undoped, Ga-doped n-type and Ga-N codoped p-type thin films on ZnO wafer using RF magnetron sputtering, The 4th International Workshop on ZnO and Related Materials, University of Giessen, Germany, October 3-6, 2006.

58. Il-Soo Kim, Tae-Hwan Kim, Sang-Hun Jeong, Manoj Kumar, Sang Sub Kim and Byung-Teak Lee, Growth and Characterization of undoped, Ga-doped n-type and Ga-N codoped p-type ZnO thin films on ZnO wafer using RF magnetron sputtering, India-Japan Workshop on ZnO Materials & Devices, Delhi, India, December 18-20, 2006 (Plenary talk).

59. Jae Young Park, Sang Sub Kim, and Byung-Teak Lee, Growth of Zinc Oxide Nanorods by Metal-organic Chemical vapor Deposition, Seminar on Multifunctional Nanomaterials, Nanostructures and Applications, Delhi, India, December 22-23, 2006.

60. Seung-Ho Hwang* and Byung-Teak Lee, Fabrication and characterization of RF magnetron Sputtered n-ZnO/p-GaN heterojunction light-emitting diodes, The 34th International Symposium on Compound Semiconductors, Kyoto, Japan, October 15-18 2007.

61. Il-Soo Kim and Byung-Teak Lee, Growth and characterization of high quality single crystal ZnMgO films on Al2O3 substrates by r. f. magnetron sputtering, International Conference on Electronic Materials 2008, Sydney, Australia, 28th July to 1st August, 2008.

62. Il-Soo Kim and Byung-Teak Lee, Growth and Characterization of single crystal ZnMgO and ZnMgAlO films on Al2O3 substrate by RF magnetron sputtering, The 5th International Workshop on ZnO and Related Materials, Ann Arbor Marriott Ypsilanti at Eagle Crest, Michigan, USA, September 22-24, 2008.

63. H. K Choi, S. H. Jung, and B.-T. Lee, Growth of As doped p-type epitaxial ZnO thin films using R.F Magnetron Sputtering, IEEE Nanotechnology Materials and Devices Conference 2008, Kyoto, Japan, October 20-22, 2008.

64. Jae-Chul Park, Il-Soo Kim, and Byung-Teak Lee, Growth and characterization of ZnMgO films and ZnO/ZnMgO multi layers by RF magnetron sputtering, International Conference on Materials for Advanced Technologies 2009, Singapore, June 28 - July 3, 2009.

65. Jang-Ho Park, Il-Soo Kim, Ju-Hoon Park, Seong-Joo Jang, and Byung-Teak Lee, Effects of 3C-SiC Buffer Layer on the Residual Strain of GaN/Si Thin Films, 8th International Conference on Nitride Semiconductors, Jeju, Korea, October 18~23, 2009.

66. Jang-Ho Park, Jae-Chul Park and Byung-Teak Lee, Effect of multi-quantum-well and photonic crystal structure on the characteristics of ZnO LED, 2009 International Conference on Nano Science and Nano Technology (GJ-NST 2009), Muan, Korea, November 5~6, 2009.

67. Jang-Ho Park, Jae-Chul Park, Myeong Won Oh, and Byung-Teak Lee, Enhanced electroluminescence of ZnO/GaN LED’s by applying ZnO/ZnMgO multi-layer structure and photonic crystal patterns, 22nd International Microprocesses and Nanotechnology Conference, Sapporo, Japan, November 16-19, 2009.

68. Il-Soo Kim and Byung-Teak Lee, Growth and Characterization of wide band gap ZnMgAlO thin films lattice-matched to ZnO substrate, (Invited) SPIE Photonics West 2010, San Francisco, California, USA, January 23~28, 2010.

69. Ne-Sang Yoon, Jang-Ho Park, Il-Soo Kim, and Byung-Teak Lee, Growth and Characterization of deep UV-range ZnMgSrO thin films lattice-matched to ZnO substrate, The 5th Forum on New Materials, Montecatini Terme, Italy, June 13~19, 2010.

70. Il-Soo Kim, Ne-Sang Yoon, Jang-Ho Park, and Byung-TeakLee, Growth and characterization of deep UV-range ZnMgAlO and ZnMgSrO thin films lattice-matched to ZnO substrate, The 6th International Workshop on Zinc Oxide and Related Materials, Changchun, China, August 5~7, 2010.

71. Yong-Ik Nam, Ho-Yeon Seo, Jang-Ho Park and Byung-Teak Lee, Characterization of Ga-As codoped p-type ZnO thin films grown by r. f. magnetron sputtering, The 6th International Workshop on Zinc Oxide and Related Materials, Changchun, China, August 5~7, 2010.

72. Jang-Ho Park, Jin-bum Lim and Byung-Teak Lee, Optical and electrical properties of deep-UV ZnMgAlO thin films grown by RF magnetron sputtering, SPIE Photonics West 2010, San Francisco, California, USA, January 23~28, 2011.

73. Nae-Sang Yoon, Jang-HoPark, and Byung-TeakLee, Effects of growth variables on the properties of deep-UV ZnMgAlO thin films lattice-matched to ZnO, International conference on materials for advanced technologies (ICMAT) 2011, Singapore, June 26 ~ July1, 2011.

74. Lim Jin Bum, Jang-Ho Park, and Byung-Teak Lee, Electrical and optical properties of ZnMaAlO thin films prepared by RF magnetron sputtering, International conference on materials for advanced technologies (ICMAT) 2011, Singapore, June 26 ~ July1, 2011.

75. Seonhwa Lee and Byung-Teak Lee, Effects of growth variables on the properties of ZnMgBeO thin films lattice-matched to SiC/Si (111), Fifth International Conference on Optical, Optoelectronic and Photonic Materials and Applications (ICOOPMA12), Nara, Japan, June 3~7, 2012.

76. Min-Sung Kim and Byung-Teak Lee, Growth and characterization of single crystalline Zn1-xMg0.2AlxO films with UV bandgap on GaN/Al2O3 template by RF magnetron sputtering, Fifth International Conference on Optical, Optoelectronic and Photonic Materials and Applications (ICOOPMA12), Nara, Japan, June 3~7, 2012.

77. Jang-Ho Park and Byung-Teak Lee, Effects of dopant on the optical and electrical properties of Zn0.9Mg0.1O TCO films prepared by RF magnetron sputtering system, Electronic materials conference (EMC) 2012, USA, June 20~22, 2012.

78. Seonhwa Lee and Byung-Teak Lee, Fabrication and characterization of deep UV ZnMgBeO/4H-SiC heterojunction diode, IUMRS International Conference in Asia 2012, Busan, Korea, August 26~31, 2012.

79. Jang-Ho Park and Byung-Teak Lee, Effects of Al contents on the optical and electrical properties of Zn0.9-xMg0.1AlxO TCO films prepared by RF magnetron sputtering system, Transparent Conductive Materials 2012, Crete, Greece, October 21~25, 2012.

80. Hoang Ba Cuong, Jang-Ho Park, Nae-Sang Yoon, Min-Sung Kim, and Byung-Teak Lee, RF magnetron sputtering growth and characterization of ZnMgAlO films with UV energy band gap, 5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials, Nagoya University, Japan, January 28 - February1, 2013.

81. Jang-Ho Park and Byung-Teak Lee, Design, growth, and characterization of GroupⅡ-doped GaZnO UV TCO films prepared by RF magnetron sputtering, International Symposium on Green Manufacturing and Applications 2013, Sheraton Waikiki Hotel, Ohau, Hawaii, USA, June 25~28, 2013

82. Hoang Ba Cuong, Che-shin Lee, and Byung-Teak Lee, Effects of silver layer on the optical and electrical properties of ZnMgBeGaO/Ag/ZnMgBeGaO transparent conductive film, Nanotech 2014 Conference, TechConnect World 2014, June 16-18, 2014, National Harbor, Maryland, USA.

83. Hoang Ba Cuong, Che-shin Lee, and Byung-Teak Lee, Effects of process variables on the properties of UV-range ZnMgBeGaO transparent conducting films, Nanotech 2014 Conference, TechConnect World 2014, 16-18 June 2014, National Harbor, Maryland, USA.

84. B. C. Hoang, J. H. Park, S. H. Jeong, and B.-T. Lee, Effects of Ga concentration, process variables and heat treatments on the properties of ZnMgBeGaO TCO films with UV-range energy band-gaps, 5th International Symposium on Transparent Conductive Materials, 12-17 October 2014, Crete, Greece.

85. J. H. Park, B. C. Hoang, S. H. Jeong and B.-T. Lee, Investigation of band-gap engineering of ZnO transparent conductive oxide thin films by addition of group II and group III elements, 5th International Symposium on Transparent Conductive Materials, 12-17 October 2014, Crete, Greece.

86. Ba Cuong Hoang, Sang-Hun Jeong and Byung-Teak Lee, Optical and electrical properties of ZnMgBeO and ZnMgBeGaO thin films sputtered at various growth conditions, Photonics West 2015, 7-12 February 2015, San Francisco, California, United States.

87. Ba Cuong Hoang and Byung-Teak Lee, Structural, optical, and electrical properties of ZnMgBeGaO/Ag/ZnMgBeGaO transparent conductive multilayer films with UV range bandgap, Photonics West 2015, 7-12 February 2015, San Francisco, California, United States.  

88. Ba Cuong Hoang and Byung-Teak Lee, Effects of CdO and Ag nano-layer insertion on optical and electrical properties of UV bandgap ZnMgBeGaO films, International Conference on Nanotechnology: Fundamentals and Applications (ICNFA'15), July 15-17, 2015, Barcelona, Spain.

89. Ngoc Minh Le, Ba Cuong Hoang and Byung-Teak Lee, ZnMgBeGaO/(Ti)CdO /ZnMgBeGaO multilayer-based transparent conductive electrodes for Ultraviolet optoelectronic applications, 2015 E-MRS Fall Meeting, September 15-18, Warsaw University of Technology, Poland.

90. Hoang Ba Cuong, Ngoc Minh Le and Byung-Teak Lee, Effects of oxygen concentration on the structural and optical properties of ZnMgO and ZnMgXO prepared by RF magnetron sputtering, 2015 E-MRS Fall Meeting, September 15-18, Warsaw University of Technology, Poland.

91. Jang-Ho Park, Hoang Ba Cuong, Ngoc Minh Le, Che-Sin Lee, Sang-Hun Jeong, and Byung-Teak Lee, Band-gap engineering of ZnO-based transparent conducting films with UV-range energy band-gaps, International Conference on Semiconductor Physics and Devices 2015, November 20~22, Guilin, China (Invited talk).

 
* 특허, Patents

1. B.-T. Lee, T.R. Hayes, R.F. Kalicek, Jr., and R.A. Logan, Method of Making a Buried Heterostructure Laser, U. S. Patent Application, Serial No. 07/954,648

2. 김진혁, 문종하, 성경필, 이병택, "가스센서의 다공성 표면보호층 제조방법", 국내 출원번호 10-2000-0007702

3. 이병택, 공성민, “실리콘 카바이드 메사 측벽의 각도 조절 방법”, 국내 특허 제 0421794호, 2004년 2월 25일 등록

4. 김진혁, 문종하, 이병택, 허기석, 김상석, “박막형 NTC 써미스터 제조방법” 국내특허 제0436980호, 2004년 6월 11일 등록

5. 김일수, 이병택, “질화물 박막 중간층을 이용한 실리콘 기판 상의 단결정산화아연 박막 제조방법” 국내특허 제 10-0576984호, 2006년 4월 28일 등록

6. 김태언, 김보람, 문종하, 이병택, 김진혁, “질화티타늄을 이용하여 실리콘 기판상에 SrTiO3/BiTiO3 인공초격자를 제조하는 방법”, 국내특허 10-0740318, 2007년 7월 10일 등록

7. 이병택, 박주훈, “유도결합 플라즈마법 및 유기금속 화학기상증착법을 이용한 박막 제조방법” 국내 특허 10-0769986호, 2007년 10월 18일 등록

8. 이병택, 김태환, “III 족 원소와 질소 (N)의 코도핑을 이용한 피형 산화아연 박막의 제조방법” 국내특허 10-0794755호, 2008년 1월 8일 등록

9. 이병택, 김일수, “ZnO에 격자 정합된 자외선용 단결정 ZnMgAlO 박막 및 그 제조방법", 국내특허 2012년 12월 11일 등록 (번호 10-1213133), PCT 2011.02.15 출원 (KR2011/000981)

 
* 주요 연구과제 수행실적

1. "박막형 가스센서의 성능 향상에 관한 연구", 1998. 5. 1. ~ 1999. 12. 31., 한국가스공사, 연구책임자

2. "SiC 공정 및 측정 기술 개발", 1999. 12. 1. ∼  2002.  9. 30., 산업자원부 차세대 신기술연구사업 (SiC 반도체 기술개발), 세부과제 책임자

3. "전자박막 공정·평가 및 이를 이용한 센서 소자 개발에 관한 연구", 1999. 9. 1. ~ 2002. 8. 30., 교육부 (BK21 핵심 사업, 전자박막연구팀), 연구책임자

4. "디지털 영상장치용 반사형 IR cut filter 개발",  2000. 08. 01. ∼  2002. 07. 31., 해빛정보 (산업자원부 부품·소재), 연구책임자  

5. "LED 소자, 박막의 미세구조 및 잔류응력 분석", 2000. 12. 1. ∼  2003. 08. 31., LG 이노텍, 연구책임자

6. "이종구조박막 결정특성의 광학적 분석기술 확립", 2001. 7. 11. ~ 2005. 6. 30., 과학기술부 국가지정연구실, 연구책임자

7. "SiON 광학박막의 ICP-RIE 공정 개발 ", 2002. 12. 1. ~ 2004. 8. 31., 휘라 포토닉스 (산업자원부), 연구책임자

8. “질화물계 고품위 에피를 위한 SiC template 성장 및 질화물 박막 특성평가”, 2004. 12. ~ 2008. 9, 광기술원 (산업자원부)

9. “나노 패터닝을 이용한 이종접합 ZnO UV LED 제작” 2006. 5. ~ 2009. 4, 지역혁신인력양성사업 (산업자원부)

10. “Si 기판 상의 나노막대 광결정 MQW ZnO 발광소자의 성장, 공정연구 및 특성평가” 2007. 5. ~ 2010. 2, 특정기초연구 (과학기술부)

 

* 저서
1. 광주지역의 투자환경, 전남대학교 지역개발연구소 2000.3.

 
 

* 국내 학회발표 : 다수
Many presentations at Korean Conferences


Copyright 2001 Byung-Teak Lee, All rights reserved.